1/8 july 2002 STL6NK55Z n-channel 550v - 1.2 w - 5.2a powerflat? zener-protected supermesh?power mosfet n typical r ds (on) = 1.2 w n extremely high dv/dt capability n improved esd capability n 100% avalanche rated n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of sts well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications n lighting n ideal for off-line power supplies, adaptors and pfc ordering information type v dss r ds(on) i d (1) pw (1) STL6NK55Z 550 v < 1.4 w 5.2 a 75 w sales type marking package packaging STL6NK55Z l6nk55z powerflat? (5x5) tape & reel powerflat ?(5x5) (chip scale package) internal schematic diagram
STL6NK55Z 2/8 absolute maximum ratings thermal data note: 1. the value is rated according to r thj-f . 2. when mounted on fr-4 board of 1inch 2 , 2 oz cu 3. pulse width limited by safe operating area 4. i sd <5.7a, di/dt<300a/ s, v dd 3/8 STL6NK55Z electrical characteristics (tcase =25c unless otherwise specified) on/off dynamic switching source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.6 a 1.2 1.4 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 10 v , i d = 2.6 a 3.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 695 88 20 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 440 v 48 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 3 w symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 275 v, i d = 2.6 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 14 20 31.5 18 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 440v, i d = 5.2 a, v gs = 10v 25 4.5 14 35 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 0.86 3.44 a a v sd (1) forward on voltage i sd =5.2 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.2 a, di/dt = 100a/s v dd =40v, t j = 150c (see test circuit, figure 5) 350 2.2 12.5 ns c a
STL6NK55Z 4/8 gate charge vs gate-source voltage static drain-source on resistance transfer characteristics output characteristics transconductance capacitance variations
5/8 STL6NK55Z normalized bvdss vs temperature source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STL6NK55Z 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STL6NK55Z dim. mm. inch min. typ max. min. typ. max. a 0.90 1.00 0.035 0.039 a1 0.02 0.05 0.001 0.002 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.64 0.71 0.79 0.025 0.028 0.031 d 5.00 0.197 e 5.00 0.197 e2 2.49 2.57 2.64 0.098 0.101 0.104 e 1.27 0.050 powerflat ? (5x5) mechanical data
STL6NK55Z 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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